AWT6135 |
RFQ for AWT6135 Required Field |
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| Product | Manufacturers | Pack | D/C |
| AWT6135 | - | - | 02+ |
The AWT6135 meets the increasing demands for higher efficiency and linearity in CDMA 1XRTT handsets. The PA module is optimized for VREF = +2.8 V,a requirement for compatibility with the Qualcomm® 6000 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4mm x 4mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 system.
Typical Application |
Features |
| • PCS CDMA Wireless Handsets• Dual Band CDMA Wireless Handsets | • InGaP HBT Technology• High Efficiency: 40%• Low Quiescent Current: 48 mA• Low Leakage Current in Shutdown Mode: <1 A• VREF = +2.8 V (+2.7 V min over temp)• Optimized for a 50 System• Low Profile Miniature Surface Mount Package:1.56mm Max• CDMA 1XRTT Compliant• CDMA 1xEV-DO Compliant |
| PARAMETER | MIN | MAX | UNIT |
| Supply Voltage (VCC) | 0 | +5 | V |
| Mode Control Voltage (VMODE) | 0 | +3.5 | V |
| Reference Voltage (VREF) | 0 | +3.5 | V |
| RF Input Power (PIN) | - | +10 | dBm |
| Storage Temperature (TSTG) | -40 | +150 |
